The ISTFA 2026 Education Workshops<\/strong> are designed to deliver in-depth, practical learning experiences for professionals at every stage of their failure analysis career. These workshops provide a hands-on environment where attendees can deepen technical expertise, explore advanced methodologies, and gain real-world skills that can be applied immediately in the lab and in the field.<\/p> Led by industry experts, researchers, and experienced practitioners, ISTFA workshops are known for their focus on real-world applications, emerging technologies, and best practices in failure analysis, materials characterization, and reliability engineering.<\/p>\n\n Saturday, October 3, 2026 | 1:30 \u2013 5:30 p.m.\u00a0 Pricing<\/strong> This short course reviews SEM (scanning electron microscopy) and SOM (scanning optical microscopy) techniques for IC failure analysis. All of these techniques can be performed on a standard SEM or SOM (using the proper laser wavelengths). The use of advanced electron\/optical beam test systems will also be discussed. The goal is to provide beneficial information to both novice and experienced failure analysts. Topics are: 1) Standard techniques: secondary electron imaging for surface topology, backscattered electron imaging, voltage contrast, capacitive coupling voltage contrast, electron beam induced current imaging, and x-ray microanalysis; 2) Specialized SEM techniques: novel voltage contrast applications, resistive contrast imaging, and charge-induced voltage alteration (both high and low energy versions); and 3) SOM techniques: light-induced voltage alteration, thermally-induced voltage alteration\/optical beam induced resistance change, Seebeck Effect imaging, soft defect localization\/laser-assisted device alteration, laser logic probing, and solid immersion lens applications.<\/p>\n\n Saturday, October 3, 2026 | 8:30 a.m. \u2013 12:30 p.m.\u00a0 Pricing<\/strong> Saturday, October 3, 2026 | 8:30 a.m. \u2013 12:30 p.m.\u00a0 Pricing<\/strong> Physical failure analysis needs to provide structure-property correlation for the root-cause finding, and calls for expertise of multiple disciplines, including:<\/p> Part #1<\/strong> \u2013 Mechanism of a latent leakage between metal lines Part #2<\/strong> \u2013 Mechanism of a latent via resistance Part #3<\/strong> \u2013 Study of corrosion mechanisms of copper and gold ball bonds based on structure-property correlation and electrochemical investigation Advanced Packaging enables the heterogeneous integration of chiplets with die embedding and die stacking techniques, and provides maximum device performance with a much faster product development cycle. However, as the 2.5D, 3D, and 3.5D packages are getting more and more complicated, it brings numerous challenges in the design, material and process development, product manufactory, yield ramping, reliability risk assessment, fault isolation and failure analysis of new products within the short timeline.<\/span><\/p> This short course provides detailed illustration of the design, process, manufactory, yield, reliability, and failure analysis for 2.5D, 3D, and 3.5D advanced packages.\u00a0 An overview of the advanced packaging industry with detailed assembly process flow, including Cu Pillars, micro bumps, thermal compressive bonding (TCB), Hybrid bonding (HB), Redistribution Layer (RDL) Lithography, die embedding, testing, and Surface Mount Technology will be discussed. Current Industry focus and research trends will be highlighted. Reliability, fault isolation, and failure analysis of advanced packages will be elaborated.<\/p>\n\n Biography<\/strong>: Dr. Yan Li received her Ph.D. degree in Materials Science and Engineering from Northwestern University, U.S.A. in 2006, and her M.S and B.S degree in Physics from Peking University, China. After more than 17 years in Intel Arizona and 3 years in Samsung Advanced Packaging group in San Jose focusing on advanced packaging technology developments, she joined\u00a0 Media Tek USA as a Principal Engineer of Packaging Technology in 2026. Dr. Li has been an active member of Minerals Metals and Materials Society (TMS), Institute of Electrical and Electronics Engineers (IEEE), American Society for Metals (ASM), and Electronic Device Failure Analysis Society (EDFAS). She has been appointed as TMS and International Symposium for Testing and Failure Analysis (ISTFA) annual conference organizer since 2011, EDFAS board member since 2019, EDFAS vice president since 2024, IEEE Electronic Components and Technology Conference (ECTC) Applied Reliability sub-committee member since 2024, and ISTFA general Chair in 2024. Dr. Li has published numerous papers and patents in the microelectronic packaging area. She is an associate editor of \u201cMicroelectronics Reliability\u201d and the co-editor of three semiconductor industry highly recognized books on 3D Microelectronic Packaging and Autonomous Vehicles.\u00a0<\/p><\/div>\n\n Biography<\/strong>: Edward I Cole, Jr. received a Ph.D. (1987) in physics from the University of North Carolina at Chapel Hill. His doctoral work involved the development and fundamental understanding of non-destructive, low energy electron beam techniques to analyze integrated circuits. He joined the Failure Analysis Department of Sandia National Laboratories in 1987. His research interests are in the development and improvement of non-destructive IC failure analysis tools, with emphasis on electron and optical beam techniques and he has published frequently in the field of failure analysis. Two of the failure analysis techniques developed by teams Dr. Cole led, Charge-Induced Voltage Alteration (\u201995) and Light-Induced Voltage Alteration (\u201998), have won R&D 100 awards. In 1995 Dr. Cole was named a Distinguished Member of the Technical Staff at Sandia National Laboratories. In 2004 Dr. Cole was appointed to the position of Sandia Senior Scientist. He has served on the executive and management committees of the ISTFA and IRPS conferences, chairing the ISTFA\u201996 event. He has served on the Electronic Device Failure Analysis Society (EDFAS) Board of Directors from 1998-2004 and was EDFAS President from 2000-2002. He is presently immediate past-editor of the EDFAS Society\u2019s magazine was General Chair of the IRPS\u201907, and serves on the IRPS Board of Directors and ASM Volunteerism committee. In 2013 he was appointed a Sandia Fellow and a Fellow of ASM International.<\/p>","protected":false},"excerpt":{"rendered":"","protected":false},"author":71671,"featured_media":0,"parent":443,"menu_order":2,"comment_status":"closed","ping_status":"closed","template":"","meta":{"_acf_changed":false,"footnotes":""},"class_list":["post-447","page","type-page","status-publish","hentry"],"bricks_content":" The ISTFA 2026 Education Workshops<\/strong> are designed to deliver in-depth, practical learning experiences for professionals at every stage of their failure analysis career. These workshops provide a hands-on environment where attendees can deepen technical expertise, explore advanced methodologies, and gain real-world skills that can be applied immediately in the lab and in the field.<\/p> Led by industry experts, researchers, and experienced practitioners, ISTFA workshops are known for their focus on real-world applications, emerging technologies, and best practices in failure analysis, materials characterization, and reliability engineering.<\/p>\n\n Saturday, October 3, 2026 | 1:30 \u2013 5:30 p.m.\u00a0 Pricing<\/strong> This short course reviews SEM (scanning electron microscopy) and SOM (scanning optical microscopy) techniques for IC failure analysis. All of these techniques can be performed on a standard SEM or SOM (using the proper laser wavelengths). The use of advanced electron\/optical beam test systems will also be discussed. The goal is to provide beneficial information to both novice and experienced failure analysts. Topics are: 1) Standard techniques: secondary electron imaging for surface topology, backscattered electron imaging, voltage contrast, capacitive coupling voltage contrast, electron beam induced current imaging, and x-ray microanalysis; 2) Specialized SEM techniques: novel voltage contrast applications, resistive contrast imaging, and charge-induced voltage alteration (both high and low energy versions); and 3) SOM techniques: light-induced voltage alteration, thermally-induced voltage alteration\/optical beam induced resistance change, Seebeck Effect imaging, soft defect localization\/laser-assisted device alteration, laser logic probing, and solid immersion lens applications.<\/p>\n\n Saturday, October 3, 2026 | 8:30 a.m. \u2013 12:30 p.m.\u00a0 Pricing<\/strong> Saturday, October 3, 2026 | 8:30 a.m. \u2013 12:30 p.m.\u00a0 Pricing<\/strong> Physical failure analysis needs to provide structure-property correlation for the root-cause finding, and calls for expertise of multiple disciplines, including:<\/p> Part #1<\/strong> \u2013 Mechanism of a latent leakage between metal lines Part #2<\/strong> \u2013 Mechanism of a latent via resistance Part #3<\/strong> \u2013 Study of corrosion mechanisms of copper and gold ball bonds based on structure-property correlation and electrochemical investigation Advanced Packaging enables the heterogeneous integration of chiplets with die embedding and die stacking techniques, and provides maximum device performance with a much faster product development cycle. However, as the 2.5D, 3D, and 3.5D packages are getting more and more complicated, it brings numerous challenges in the design, material and process development, product manufactory, yield ramping, reliability risk assessment, fault isolation and failure analysis of new products within the short timeline.<\/span><\/p> This short course provides detailed illustration of the design, process, manufactory, yield, reliability, and failure analysis for 2.5D, 3D, and 3.5D advanced packages.\u00a0 An overview of the advanced packaging industry with detailed assembly process flow, including Cu Pillars, micro bumps, thermal compressive bonding (TCB), Hybrid bonding (HB), Redistribution Layer (RDL) Lithography, die embedding, testing, and Surface Mount Technology will be discussed. Current Industry focus and research trends will be highlighted. Reliability, fault isolation, and failure analysis of advanced packages will be elaborated.<\/p>\n\n Biography<\/strong>: Dr. Yan Li received her Ph.D. degree in Materials Science and Engineering from Northwestern University, U.S.A. in 2006, and her M.S and B.S degree in Physics from Peking University, China. After more than 17 years in Intel Arizona and 3 years in Samsung Advanced Packaging group in San Jose focusing on advanced packaging technology developments, she joined\u00a0 Media Tek USA as a Principal Engineer of Packaging Technology in 2026. Dr. Li has been an active member of Minerals Metals and Materials Society (TMS), Institute of Electrical and Electronics Engineers (IEEE), American Society for Metals (ASM), and Electronic Device Failure Analysis Society (EDFAS). She has been appointed as TMS and International Symposium for Testing and Failure Analysis (ISTFA) annual conference organizer since 2011, EDFAS board member since 2019, EDFAS vice president since 2024, IEEE Electronic Components and Technology Conference (ECTC) Applied Reliability sub-committee member since 2024, and ISTFA general Chair in 2024. Dr. Li has published numerous papers and patents in the microelectronic packaging area. She is an associate editor of \u201cMicroelectronics Reliability\u201d and the co-editor of three semiconductor industry highly recognized books on 3D Microelectronic Packaging and Autonomous Vehicles.\u00a0<\/p><\/div>\n\n Biography<\/strong>: Edward I Cole, Jr. received a Ph.D. (1987) in physics from the University of North Carolina at Chapel Hill. His doctoral work involved the development and fundamental understanding of non-destructive, low energy electron beam techniques to analyze integrated circuits. He joined the Failure Analysis Department of Sandia National Laboratories in 1987. His research interests are in the development and improvement of non-destructive IC failure analysis tools, with emphasis on electron and optical beam techniques and he has published frequently in the field of failure analysis. Two of the failure analysis techniques developed by teams Dr. Cole led, Charge-Induced Voltage Alteration (\u201995) and Light-Induced Voltage Alteration (\u201998), have won R&D 100 awards. In 1995 Dr. Cole was named a Distinguished Member of the Technical Staff at Sandia National Laboratories. In 2004 Dr. Cole was appointed to the position of Sandia Senior Scientist. He has served on the executive and management committees of the ISTFA and IRPS conferences, chairing the ISTFA\u201996 event. He has served on the Electronic Device Failure Analysis Society (EDFAS) Board of Directors from 1998-2004 and was EDFAS President from 2000-2002. He is presently immediate past-editor of the EDFAS Society\u2019s magazine was General Chair of the IRPS\u201907, and serves on the IRPS Board of Directors and ASM Volunteerism committee. In 2013 he was appointed a Sandia Fellow and a Fellow of ASM International.<\/p>","yoast_head":"\nMaterials Science in Physical Failure Analyses for Root-cause Finding<\/h4>\n\n
Instructor:\u00a0Ed Cole, SANDIA National Labs<\/strong><\/p>
Member<\/strong>\u00a0\u2013 $325
Member (Student)\u00a0<\/strong>\u2013 $199
NonMember\u00a0<\/strong>\u2013 $425
NonMember (Student)\u00a0<\/strong>\u2013 $199<\/p>Beam Based Defect Localization \u00a0<\/strong><\/h4>\n\n
Instructor: Wentao Qin, Microchip Technology Inc.<\/strong><\/p>
Member<\/strong>\u00a0\u2013 $325
Member (Student)\u00a0<\/strong>\u2013 $199
NonMember\u00a0<\/strong>\u2013 $425
NonMember (Student)\u00a0<\/strong>\u2013 $199<\/p>\n\n2.5D, 3D, 3.5D advanced packaging techniques: design, process, manufactory, yield, reliability, and failure analysis<\/h4>\n\n
Instructor: Yan Li, MediaTek<\/strong><\/p>
Member<\/strong>\u00a0\u2013 $325
Member (Student)\u00a0<\/strong>\u2013 $199
NonMember\u00a0<\/strong>\u2013 $425
NonMember (Student)\u00a0<\/strong>\u2013 $199<\/p>\n\n
Abstract \u2013 A latent leakage escapes initial electrical testing but emerges at reliability test or even in a customer application. Such an issue was discovered at reliability test. An amorphous carbonaceous particle with a significant fraction of sp2 bonding was found between adjacent metal lines. The particle received thermal energy from wafer processing and the reliability test, which caused densification, carbon enrichment, and likely graphitization of the particle catalyzed by the metals. The conductivity increase led to the latent leakage. Preventive measures are stated.
Keywords: Reduction reaction, Hybridization of atomic orbitals, sp1\/sp2\/sp3 hybridization, Bonding and antibonding orbitals, Pyrolysis, Thermodynamics, Free energy, Graphitization.<\/em><\/p>
Abstract \u2013 The via resistance increase after data retention bake caused device failure. The post W Chemical Mechanical Planarization (WCMP) cleaning left residual WO3<\/sub>\u00a0on the W plug. The WO3<\/sub>\u00a0had been reduced by the Ti of the overlaying metal line, through which TiO2<\/sub>\u00a0formed. Al diffused through grain boundaries of TiN to reduce the WO3<\/sub>\u00a0and TiO2<\/sub>. The higher thermodynamic stability of TiO2<\/sub>\u00a0and Al2<\/sub>O3<\/sub>, and likely void formation from mechanical stress, \u00a0contributed to the via resistance increase. Solution to the problem is stated.
Keywords: Chemical-mechanical planarization, Pourbaix diagram, electron shielding, electronegativity, covalent bond, ionic bond, metallic bond, bond energy, formation enthalpy.<\/em><\/p>
Abstract \u2013 Wire bonding is a predominant connection technique in microelectronic packaging, playing a crucial role in a wide array of modern applications, from medical devices and aerospace technology to automotive innovations, the Internet of Things (IoT) and artificial intelligence (AI). The dependability of the packaging is intrinsically linked to the reliability of the foundational wire bonds. Part 3 of the course delves into the interpretation of corrosion mechanisms that lead to reliability issues in both copper (Cu) and gold (Au) ball bonds, integrating perspectives from both microstructural analysis and electrochemical studies. It is observed that corrosion in Cu ball bonds begins with the pitting of the most Cu-rich layer (MCRL) underneath a layer of chlorinated water, progresses to crevice corrosion, and may be further aggravated by stress corrosion cracking. Within the MCRL, aluminum (Al) tends to be oxidized preferentially, while copper (Cu) atoms are largely unaffected and aggregate to form nanoparticles. Strategies for mitigating this corrosion are outlined. Preliminary evidence also points to similar corrosion mechanisms in Au ball bonds.
Keywords: Copper wire bonding, gold wire bonding, corrosion, microstructures, electrochemical analyses, interface, intermetallic, corrosion potential, Pourbaix diagram, chlorine, chloride ions, crevice corrosion, hydrogen embrittlement, stress corrosion cracking (SCC), dealloying, automotive.<\/em><\/p>\n\nEducation Workshops<\/h1>\n\n
Materials Science in Physical Failure Analyses for Root-cause Finding<\/h4>\n\n
Instructor:\u00a0Ed Cole, SANDIA National Labs<\/strong><\/p>
Member<\/strong>\u00a0\u2013 $325
Member (Student)\u00a0<\/strong>\u2013 $199
NonMember\u00a0<\/strong>\u2013 $425
NonMember (Student)\u00a0<\/strong>\u2013 $199<\/p>Beam Based Defect Localization \u00a0<\/strong><\/h4>\n\n
Instructor: Wentao Qin, Microchip Technology Inc.<\/strong><\/p>
Member<\/strong>\u00a0\u2013 $325
Member (Student)\u00a0<\/strong>\u2013 $199
NonMember\u00a0<\/strong>\u2013 $425
NonMember (Student)\u00a0<\/strong>\u2013 $199<\/p>\n\n2.5D, 3D, 3.5D advanced packaging techniques: design, process, manufactory, yield, reliability, and failure analysis<\/h4>\n\n
Instructor: Yan Li, MediaTek<\/strong><\/p>
Member<\/strong>\u00a0\u2013 $325
Member (Student)\u00a0<\/strong>\u2013 $199
NonMember\u00a0<\/strong>\u2013 $425
NonMember (Student)\u00a0<\/strong>\u2013 $199<\/p>\n\n
Abstract \u2013 A latent leakage escapes initial electrical testing but emerges at reliability test or even in a customer application. Such an issue was discovered at reliability test. An amorphous carbonaceous particle with a significant fraction of sp2 bonding was found between adjacent metal lines. The particle received thermal energy from wafer processing and the reliability test, which caused densification, carbon enrichment, and likely graphitization of the particle catalyzed by the metals. The conductivity increase led to the latent leakage. Preventive measures are stated.
Keywords: Reduction reaction, Hybridization of atomic orbitals, sp1\/sp2\/sp3 hybridization, Bonding and antibonding orbitals, Pyrolysis, Thermodynamics, Free energy, Graphitization.<\/em><\/p>
Abstract \u2013 The via resistance increase after data retention bake caused device failure. The post W Chemical Mechanical Planarization (WCMP) cleaning left residual WO3<\/sub>\u00a0on the W plug. The WO3<\/sub>\u00a0had been reduced by the Ti of the overlaying metal line, through which TiO2<\/sub>\u00a0formed. Al diffused through grain boundaries of TiN to reduce the WO3<\/sub>\u00a0and TiO2<\/sub>. The higher thermodynamic stability of TiO2<\/sub>\u00a0and Al2<\/sub>O3<\/sub>, and likely void formation from mechanical stress, \u00a0contributed to the via resistance increase. Solution to the problem is stated.
Keywords: Chemical-mechanical planarization, Pourbaix diagram, electron shielding, electronegativity, covalent bond, ionic bond, metallic bond, bond energy, formation enthalpy.<\/em><\/p>
Abstract \u2013 Wire bonding is a predominant connection technique in microelectronic packaging, playing a crucial role in a wide array of modern applications, from medical devices and aerospace technology to automotive innovations, the Internet of Things (IoT) and artificial intelligence (AI). The dependability of the packaging is intrinsically linked to the reliability of the foundational wire bonds. Part 3 of the course delves into the interpretation of corrosion mechanisms that lead to reliability issues in both copper (Cu) and gold (Au) ball bonds, integrating perspectives from both microstructural analysis and electrochemical studies. It is observed that corrosion in Cu ball bonds begins with the pitting of the most Cu-rich layer (MCRL) underneath a layer of chlorinated water, progresses to crevice corrosion, and may be further aggravated by stress corrosion cracking. Within the MCRL, aluminum (Al) tends to be oxidized preferentially, while copper (Cu) atoms are largely unaffected and aggregate to form nanoparticles. Strategies for mitigating this corrosion are outlined. Preliminary evidence also points to similar corrosion mechanisms in Au ball bonds.
Keywords: Copper wire bonding, gold wire bonding, corrosion, microstructures, electrochemical analyses, interface, intermetallic, corrosion potential, Pourbaix diagram, chlorine, chloride ions, crevice corrosion, hydrogen embrittlement, stress corrosion cracking (SCC), dealloying, automotive.<\/em><\/p>\n\n